PART |
Description |
Maker |
AN580 |
INFRARED GESTURE SENSING
|
Silicon Laboratories
|
NTE1478 |
Integrated Circuit Solenoid Driver & Signal Sensing Circuit
|
NTE[NTE Electronics]
|
TA2061AF E008160 |
INFRARED LINEAR AUDIO SIGNAL TRANSMIT IC From old datasheet system
|
http:// Toshiba
|
FXLA102L8X12 FXLA10212 |
Low-Voltage Dual-Supply 2-Bit Voltage Translator with Configurable Voltage Supplies and Signal Levels, 3-State Outputs, and Auto Direction Sensing
|
Fairchild Semiconductor
|
FXLA104 FXLA104UMX |
Low-Voltage Dual-Supply 4-Bit Voltage Translator with Configurable Voltage Supplies and Signal Levels, 3-State Outputs, and Auto Direction Sensing
|
Fairchild Semiconductor
|
MC34064D-5R2 MC34064-D |
Undervoltage Sensing Circuit Under voltage Sensing Circuit
|
On Semiconductor
|
MC33164D-5R2 MC34164D-3G MC34164D-3R2 MC34164D-3R2 |
3 nV/vHz Ultralow Distortion Voltage Feedback High Speed Amplifier; Package: SOIC-EP; No of Pins: 8; Temperature Range: Industrial MICROPOWER UNDERVOLTAGE SENSING CIRCUITS 1-CHANNEL POWER SUPPLY SUPPORT CKT, PDSO5 MICROPOWER UNDERVOLTAGE SENSING CIRCUITS 1-CHANNEL POWER SUPPLY SUPPORT CKT, PDSO8 MICROPOWER UNDERVOLTAGE SENSING CIRCUITS 1-CHANNEL POWER SUPPLY SUPPORT CKT, PBCY3
|
http:// ONSEMI[ON Semiconductor]
|
LED55BF LED55CF LED56F |
GAAS INFRARED EMITTIN DIODE 4.67 mm, 1 ELEMENT, INFRARED LED, 940 nm
|
QT[QT Optoelectronics]
|
OP290 OP290A OP290B OP290C OP291A OP291B OP291C OP |
4.95 mm, 1 ELEMENT, INFRARED LED, 890 nm Plastic Infrared Emitting Diode
|
OPTEK TECHNOLOGY INC OPTEK Technologies
|
OP168F OP268FB OP268FPS OP268FA OP268FC OP269A OP2 |
Plastic Infrared Emitting Diode 0.76 mm, 1 ELEMENT, INFRARED LED, 890 nm
|
TT electronics OPTEK Technology OPTEK TECHNOLOGY INC
|
AA3528AF3C |
2.4 mm, 1 ELEMENT, INFRARED LED, 940 nm 3.5x2.8 mm INFRARED EMITTING DIODE
|
Kingbright Corporation
|
LN59-LNA2702L LNA2702L LN59 |
GaAs Bi-directional Infrared Light Emitting Diodes 2.5 mm, 1 ELEMENT, INFRARED LED, 940 nm
|
Panasonic, Corp. Panasonic Corporation Panasonic Semiconductor
|